Nanowires fine tunable fabrication by varying the concentration ratios, the etchant and the plating spices in metal-assisted chemical etching of 111 silicon wafer

The metal-assisted chemical etching (MACE) was used to synthesize silicon nanowires. The effects of etchant concentration, etching and chemical plating time and doping density on silicon nanowires length were investigated. It is shown that increasing the HF and H2O2 concentrations leads to etching rate increment and formation of wire-like structure. The results show that the appropriate ratio of concentration to form the silicon nanowires (SiNWs) follows the [HF]/[H2O2]= R equation with R values being 2.5, 3 and 3.5, and any deviation from these ratios, results in destruction of wire-like structure. Moreover, the critical etching rates to form the SiNWs are in the range of 4nm/s to 5nm/s. must be Times New Roman 8.