Author/Authors :
Saraei, A Department of Semiconductor - Materials and Energy Research Center, Karaj, Iran , Eshraghi, M.J Department of Semiconductor - Materials and Energy Research Center, Karaj, Iran , Tajabadi, F Department of Nanomaterials and Advanced Materials - Materials and Energy Research Center, Karaj, Iran , Massoudi, A Department of Semiconductor - Materials and Energy Research Center, Karaj, Iran
Abstract :
An experimental setup has been developed for successive photo-electrochemical etching and EIS
measurement of semiconductor samples. Furthermore, an algorithm based on electrochemical
capacitance-voltage (ECV) has been developed for calculating dopant profile based on the
measurements by the developed setup. Phosphorous diffusion profile in silicon was estimated by
employing the developed setup and algorithms. Measurements by proposing setup and algorithm are in
good agreement with commercial ECV instrument and obtained results were compared with dopant
profile-resistivity correspondence method.
