Spectroscopic-ellipsometric study of native oxide removal by liquid phase HF process

Ex situ spectroscopic ellipsometry (SE) measurements have been employed to investigate the effect of liquid-phase hydrofluoric acid (HF) cleaning on Si<100> surfaces for microelectromechanical systems application. The hydrogen terminated (H-terminated) Si surface was realized as an equivalent dielectric layer, and SE measurements are performed. The SE analyses indicate that after a 20-s 100:5 HF dip with rinse, the Si (100) surface was passivated by the hydrogen termination and remained chemically stable. Roughness of the HF-etched bare Si (100) surface was observed and analyzed by the ex-situ SE. Evidence for desorption of the H-terminated Si surface layer is studied using Fourier transform infrared spectroscopy and ellipsometry, and discussed. This piece of work explains the usage of an ex situ, non-destructive technique capable of showing state of passivation, the H-termination of Si <100> surfaces.