Title of article :
Investigating the effect of some parameters of the channel on the characteristics of tunneling carbonnanotube field-effect transistor
Author/Authors :
Karimi, Najmeh Valed Rasht Branch - Islamic Azad University , Pourasad, Yaghoub Urmia University of Technology
Abstract :
his paper studies p-i-n tunneling carbon nanotube field-effect transistor to investigate the effect of
various parameters of the channel on the characteristics of
tunneling carbon nanotube field-effect transistor. Tunneling carbon nanotube field-effect transistor (T-CNTFET)
has been simulated using non-equilibrium Green’s function
(NEGF), and the transmission was conducted through
inelastic scattering. Besides the evaluation of device performance, various parameters of the channel were also
compared. One of the parameters is considered as the
variable, while other parameters of the channel are constant. Then, improved characteristics were discussed by
selection of some channel parameters. T-CNTFET with
CNT (10, 0) with oxide thickness = 1 nm shows reduced
sub-threshold swing (18 mV/decade).
Keywords :
Channel diameter , Channel length (L) , Gate oxide thickness , Non-equilibrium Green’s function (NEGF) , Tunneling carbon nanotube field-effect transistor (T-CNTFET)
Journal title :
Astroparticle Physics
