Representation of heterostructure electrically doped nanoscale tunnel FET with Gaussian‑doping profle for high‑performance low‑power applications

In this paper, a gallium antimonide junctionless tunnel feld-efect transistor based on electrically doped concept (GaSb– EDTFET) is studied and simulated. The performance of the device is analyzed based on the energy band diagram and electric feld profle. The on-current, transconductance, and cut-of frequency are enhanced in case of GaSb–EDTFET compared with Si-EDTFET due to the combination of the high tunneling efciency of the narrow bandgap and the high-electron mobility of GaSb. On the other hand, the Gaussian-doping profle decreases the ambipolar and of current by increasing the tunneling barrier length at the drain/channel interface. Hence, applying Gaussian-doping profle on GaSb–EDTFET makes it a suitable candidate for analog and digital applications. Next, heterostructure channel/source interface EDTFET is studied which uses GaSb for the source and AlGaSb for the drain and channel regions. Then, it has been optimized by numerical simulation in terms of aluminum (Al) composition. The optimal Al composition was founded to be around 10% (x=0.1). It is shown that the blend of Gaussian-doping profle and the heterostructure channel/source interface with optimal Al composition remarkably reduces ambipolar current amount to a value of 1.3×10−23 A/μm. The improvements in terms of Iof, Ion, Ion/Iof rate, subthreshold swing, transconductance, cut-of frequency, and also suppressed ambipolar behavior are illustrated by numerical simulations.