Title of article :
Fabrication of SiNWs/PEDOT:PSS Heterojunction Solar Cells
Author/Authors :
Abdul-Hameed, A. A Department of Physics - College of Science - University of Basrah - Basrah, Iraq , Ali, B Department of Physics - College of Science - University of Basrah - Basrah, Iraq , Al-Taay, H. F Department of Physics - College of Sciences for Women - University of Baghdad - Baghdad, Iraq , Mahdi, M. A Department of Physics - College of Science - University of Basrah - Basrah, Iraq
Abstract :
Silicon nanowires (SiNWs) are synthesized through a metal-assisted chemical etching (MACE) method using
Si (100) substrates and silver (Ag) as a catalyst. Scanning electron microscope (SEM) images confirmed that the length
of prepared SiNWs was increased when etching time increased. The prepared SiNWs demonstrated considerably low
light reflectance at a wavelength range of 200–1100 nm. The photoluminescence (PL) spectra of the grown SiNWs
showed a broad emission band peaked at a wavelength of about 750 nm. A solar cell and photodetector based on
heterojunction SiNWs/PEDOT:PSS were fabricated using SiNWs that prepared with different etching time and its J–V,
sensitivity, and time response were investigated. The conversion efficiency of the fabricated solar cell was increased
from 0.39% to 0.68% when wire length decreased from 24 μm to 21 μm, respectively. However, the sensitivity of the
heterojunction SiNWs/PEDOT:PSS photodetector was decreased from 53774% to 36826% when wire length decreased
from 24 μm to 21 μm, respectively.
Keywords :
Silicon nanowires , PEDOT , Solar cell , Photodetector , Organic/inorganic device