Title of article
Modelling of High Quantum Efficiency Avalanche Photodiode
Author/Authors
Baldawi, T Department of Electrical Engineering - Princess Sumaya University for Technology - Jordan , Abuelhaija, A Electrical Engineering Department - Applied Science Private University - Jordan
Pages
7
From page
509
To page
515
Abstract
A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and quantum efficiency. The performance of the device is theoretically treated especially at the wave-length region 1.55μm where the Silica optical fiber has minimum attenuation loss. It has been found that at this wave-length and for the optimum device design the quantum efficiency approaches about 90%.
Keywords
Avalanche Photodiodes , Responsivity , Quantum Efficiency
Serial Year
2019
Record number
2495069
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