Tantalum/ Nitrogen and n-type WO3 Semiconductor/FTO Structures as a Cathode for the Future of Nanodevices

In the last decades an extensive number of research papers published on nano chip electrode and cathode electrochromic materials. Tantalum (Ta) with so high melting point can be a immeasurable candidate for the future of nanochip devices. However, its surface has not enough trap centers and occupation states, so nitrogen ions exposed on Ta surface may solve this problem. For this purpose, in the present work, samples of tantalum (99.99%) with 0.58 mm thickness were embedded by nitrogen ions. The ions’ implantation manner was operated at 30 keV and also at various doses which were in the range between 1017- 1018 ions/cm2.The electrical, nanostructures characteristics, sample surface topography property were investigated on Tantalum nitrides (Ta/N) structures by looking at current–voltage (I–V) curves. In addition to Ta/N, WO3 powders as a famous Electrochromic (EC) metal oxide, a silver metal deposited on fluorine doped tin oxide (FTO)-coated glass and multilayer structure with using the physical vapor deposition (PVD) apparatus are determined. Some techniques such as UV- visible, Atomic Force Microscopy (AFM) and X-Ray Diffraction (XRD) have been appropriated. The obtained results show the formation of hexagonal tantalum nitride (TaN0.43), and more trap centers of the sample surface (in comparison to current cathode material of EC device (ECD)). The electrical resistivity of the tantalum following nitrogen implantation is also perceived to increase with ion doses. Consequently, Ta/N with more trap centers (rough surface) can be suggested as a good element of the future of EC and nanodevices.