Title of article :
Structural and morphological properties of ITO thin films grown by magnetron sputtering
Author/Authors :
Ghorannevis, Z Department of Physics - Karaj Branch - Islamic Azad University, Karaj , Akbarnejad, E Plasma Physics Research Centre - Science and Research Branch - Islamic Azad University, Tehran , Ghoranneviss, M Plasma Physics Research Centre - Science and Research Branch - Islamic Azad University, Tehran
Abstract :
Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied
systematically by changing deposition time. The X-ray
diffraction (XRD) data indicate polycrystalline thin films
with grain orientations predominantly along the (2 2 2) and
(4 0 0) directions. From atomic force microscopy (AFM) it
is found that by increasing the deposition time, the
roughness of the film increases. Scanning electron microscopy
(SEM) images show a network of a high-porosity
interconnected nanoparticles, which approximately have a
pore size ranging between 20 and 30 nm. Optical measurements
suggest an average transmission of 80 % for the
ITO films. Sheet resistances are investigated using fourpoint
probes, which imply that by increasing the film
thickness the resistivities of the films decrease to
2.43 9 10-5 X cm.
Keywords :
Indium tin oxide , Magnetron sputtering , Thickness
Journal title :
Journal of Theoretical and Applied Physics