Title of article :
Structural and morphological properties of ITO thin films grown by magnetron sputtering
Author/Authors :
Ghorannevis, Z Department of Physics - Karaj Branch - Islamic Azad University, Karaj , Akbarnejad, E Plasma Physics Research Centre - Science and Research Branch - Islamic Azad University, Tehran , Ghoranneviss, M Plasma Physics Research Centre - Science and Research Branch - Islamic Azad University, Tehran
Pages :
6
From page :
285
To page :
290
Abstract :
Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using fourpoint probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 9 10-5 X cm.
Keywords :
Indium tin oxide , Magnetron sputtering , Thickness
Journal title :
Journal of Theoretical and Applied Physics
Serial Year :
2015
Record number :
2508620
Link To Document :
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