Title of article :
Electrical properties and I–V characteristics of 5,14-dihydro- 5,7,12,14-tetraazapentacene doped Schottky barrier diode
Author/Authors :
Ghalami Bavil Olyaee, Hassan Islamic Azad University - South Tehran Branch - Iranshaher Shomali, Tehran , J. S. Foot, Peter Kingston University London - Penrhyn Road - Kingston upon Thames - Surrey, UK , Montgomery, Vincent Kingston University London - Penrhyn Road - Kingston upon Thames - Surrey, UK
Abstract :
The current–voltage (I–V) characteristics of Aluminium/ 5,14-dihydro-5,7,12,14-tetraazapentacenes (L5H2 or DHTAPs) doped surface-type structures were investigated in air at ambient temperature and moisture. The conventional forward bias I–V method, Semi-logarithm, Cheung functions
and modified Norde’s function were used to extract the diode
parameters including ideality factor, series resistance and
barrier height. The parameter values obtained from these four
different methods were found in good agreement.
Keywords :
Schottky diodes , 5,14-dihydro-5,7,12,14- tetraazapentacenes (L5H2 or DHTAPs) doped , Series resistance , Ideality factor , Barrier height
Journal title :
Journal of Theoretical and Applied Physics
