Title of article :
Capacitive properties of zinc oxide thin films by radiofrequency magnetron sputtering
Author/Authors :
Ondo‑Ndong, Roger Laboratoire Pluridisciplinaire des Sciences (LAPLUS) - Ecole Normale Supérieure - Libreville - BP17009 - Libreville - Gabon , Essone‑Obame, Hans Laboratoire Pluridisciplinaire des Sciences (LAPLUS) - Ecole Normale Supérieure - Libreville - BP17009 - Libreville - Gabon , Hermance Moussambi, Zita Laboratoire Pluridisciplinaire des Sciences (LAPLUS) - Ecole Normale Supérieure - Libreville - BP17009 - Libreville - Gabon , Koumba, Nathaniel Laboratoire Pluridisciplinaire des Sciences (LAPLUS) - Ecole Normale Supérieure - Libreville - BP17009 - Libreville - Gabon
Abstract :
The study focused on the production of zinc oxide (ZnO) thin films as a dielectric material for use in metal–insulator–semiconductor
capacitors. The objective of this study has demonstrated the frequency dependence of conductivity and capacity.
Keywords :
Zinc oxide , Thin films , Sputtering , Current–voltage study , Capacity properties , FBAR device
Journal title :
Journal of Theoretical and Applied Physics
