Title of article :
Improving the Dielectric Properties of the ‎Ba(Zr0.1Ti0.9)O3-based Ceramics by Adding ‎a Li2O–SiO2 Sintering Agent Step by Step ‎
Author/Authors :
Ma, R. Engineering Research Center of Advanced Ferroelectric Functional Materials - China , Cui, B. Dept of Chemistry and Materials Science, Northwest University - People’s Republic of China , Hu, D. Engineering Research Center of Advanced Ferroelectric Functional Materials - China , Wang, Y. Engineering Research Center of Advanced Ferroelectric Functional Materials - China , Zhao, W. Engineering Research Center of Advanced Ferroelectric Functional Materials - China , Tian, M. Engineering Research Center of Advanced Ferroelectric Functional Materials - China
Pages :
9
From page :
233
To page :
241
Abstract :
To meet the needs of future multilayer ceramic capacitors(MLCCs), a low sintering temperature, higher capacitance and thinner dielectric layers are necessary. To achieve this goal, an appropriate sintering agent and appropriatedoping technique must be developed to reduce the sintering temperature and optimize the ceramic’smicrostructure. In this study, we researched the effect of Li2O-SiO2 (Li-Si-O) and how it is added on the dielectric properties of the Ba(Zr0.1Ti0.9)O3-based ceramics. The dielectric constant increased significantly by adding Li-Si-O stepbystep, but decreased with addition in a one-step. The dielectric constantincreased first and then decreased with the increasing of Li-Si-O content, and reached a maximum of 18942 at 0.10 wt% Li-Si-O, and the temperature-capacitance characteristic (TCC) of the samples with a Li-Si-O content less than 0.20 wt% met the Y5V standards. The Li-Si-O reduced the sintering temperature of the Ba(Zr0.1Ti0.9)O3-basedceramics to 1100 °C, and the dielectric constant first increased and then decreased with increasing sintering temperature increasing. Keywords
Keywords :
Li-Si-O , Step by step method , Dielectric properties , Sintering temperature
Journal title :
International Journal of Nanoscience and Nanotechnology (IJNN)
Serial Year :
2020
Record number :
2526144
Link To Document :
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