Author/Authors :
MOVLA, Hossein university of tabriz - Faculty of Physics - Department of solid state physics, تبريز, ايران , SOHRABI, Foozieh university of tabriz - Faculty of Physics - Department of atomic and molecular physics, تبريز, ايران , FATHI, Jafar university of tabriz - Faculty of Physics - Department of atomic and molecular physics, تبريز, ايران , BABAEI, Hassan university of tabriz - Faculty of Physics - Department of Theoretical physics, تبريز, ايران , NIKNIAZI, Arash university of tabriz - Faculty of Physics - Department of solid state physics, تبريز, ايران , KHALILI, Khadije university of tabriz - Research Institute for Applied Physics and Astronomy (RIAPA) - Photonics Group, تبريز, ايران , ES’HAGHI GORJI, Nima gonabad university of medical sciences - Technical and Engineering Faculty of Bonab - Department of optics and laser, ايران
Abstract :
We present a p-i-n structured solar cell with stacked layers of InxGa1−x N Quantum Dots (QDs) with different indium composition. The photocurrent and surface recombination processes are investigated in the i-region. We have shown that the QDs in the i-region can play the role of both generation or recombination centers. The photocurrent has been calculated by self-consistent method to solve continuity equation of charge carriers in the layers of the i-region. By changing the Indium composition in Inx Ga1−xN QDs, the band gap of QDs varies and therefore provides a considerable overlapping with solar spectrum. Proposed SC with different-sized QDs and different Indium composition leads to absorption of a desirable wavelength range of solar spectrum and therefore a “rainbow” solar cell can be designed.
Keywords :
p , i , n Solar Cells , Inx Ga1−xN Quantum dots , photocurrent , surface recombination rate.
