Effect of nitrogen incorporation on the electronic and optical properties of AlGaAsN/GaAs quantum well lasers

In order to investigate the profound effect of small amounts of nitrogen incorporated into the III-V systems on the fundamental band gap, which decreases dramatically with increasing of N+ implantation, we present a pseudopotential formalism within the Virtual Crystal Approximation confronted to the Band Anti-crossing model, which parameterizes successfully such behaviour, so as to study the electronic and optical properties of dilute AlxGa1-xAs1-yNy materials, prepared by implantation of N+ into epitaxial AlGaAs. Analytical formulas of quantized energy levels in AlGaAsN quantum well (QW) lasers and optical transition wavelengths between subbands are presented and compared to simulations based on our programs