Author/Authors :
BERTRAM, Frank Otto-von-Guericke-University Magdeburg - Institute of Experimental Physics, Germany , MULLER, Marcus Otto-von-Guericke-University Magdeburg - Institute of Experimental Physics, Germany , SCHMIDT, Gordon Otto-von-Guericke-University Magdeburg - Institute of Experimental Physics, Germany , VEIT, Peter Otto-von-Guericke-University Magdeburg - Institute of Experimental Physics, Germany , CHRISTEN, Jurgen Otto-von-Guericke-University Magdeburg - Institute of Experimental Physics, Germany , URBAN, Arne Georg-August-University Gottingen - Fourth Institute of Physics, Germany , MALINDRETOS, Joerg Georg-August-University Gottingen - Fourth Institute of Physics, Germany , RIZZI, Angela Georg-August-University Gottingen - Fourth Institute of Physics, Germany
Abstract :
Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperature, the structural and optical properties of GaN nanocolumns, in particular extended defects like stacking faults and dislocations, have been characterized. The inuence of the crystalline real structure on the emission properties using the capability of addressing individual stacking faults is comprehensively examined.
Keywords :
Scanning transmission electron microscope , cathodoluminescence , extended defects , basal plane stacking fault , GaN nanocolumns
