Title of article
Investigation of resistive switching in Anodized titanium Dioxide thin films
Author/Authors
saraei, a. materials and energy research center - department of semiconductors, ايران , eshraghi, m.j. materials and energy research center - department of semiconductors, ايران , massoudi, a. materials and energy research center - department of semiconductors, ايران
From page
34
To page
37
Abstract
In this work, TiO_2 nanostructures were grown on Titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO_2/Ti device. Resistive switching characteristics indicate that the porous TiO_2 are one of the potential materials for nonvolatile memory applications. Increasing anodizing duration will increase pore lengths which in turn causes increase in high resistance and low resistance differences.
Keywords
Anodized Titanium Dioxide , Resistive Switching , Porous Materials
Journal title
Advanced Ceramics Progress
Journal title
Advanced Ceramics Progress
Record number
2530824
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