Title of article :
Investigation of resistive switching in Anodized titanium Dioxide thin films
Author/Authors :
saraei, a. materials and energy research center - department of semiconductors, ايران , eshraghi, m.j. materials and energy research center - department of semiconductors, ايران , massoudi, a. materials and energy research center - department of semiconductors, ايران
Abstract :
In this work, TiO_2 nanostructures were grown on Titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO_2/Ti device. Resistive switching characteristics indicate that the porous TiO_2 are one of the potential materials for nonvolatile memory applications. Increasing anodizing duration will increase pore lengths which in turn causes increase in high resistance and low resistance differences.
Keywords :
Anodized Titanium Dioxide , Resistive Switching , Porous Materials
Journal title :
Advanced Ceramics Progress
Journal title :
Advanced Ceramics Progress
