Title of article :
Simulation of storage time versus reverse bias current for p+n and pin diodes
Author/Authors :
KESERLIO GLU, Mehmet Serhat Pamukkale University - Faculty of Engineering - Department of Electrical Electronics Engineering, TURKEY , ERKAYA, Hasan Huseyin Eskisehir Osmangazi University - Faculty of Engineering and Architecture - Department of Electrical Electronics Engineering, TURKEY
Abstract :
In this study, the reverse-recovery behaviors of pin and p+n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to solve the semiconductor equations. MatLab partial differential equation solver was used. The reverse recovery response of pin and p+n diodes was obtained for various values of a resistor in series and of carrier lifetime. The transient response for voltage and current was determined
Keywords :
Reverse recovery , pin diode , semiconductor devices , semiconductor devices simulation
Journal title :
Turkish Journal of Electrical Engineering and Computer Sciences
Journal title :
Turkish Journal of Electrical Engineering and Computer Sciences
