Title of article :
Estimates of EEPROM Device Lifetime
Author/Authors :
LI, Leilei Xidian University - School of Microelectronics, China , LI, Leilei China Electronics Technology Group Corporation - 58th Research Institute, China , YU, Zongguang Xidian University - School of Microelectronics, China , YU, Zongguang China Electronics Technology Group Corporation - 58th Research Institute, China , HAO, Yue Xidian University - School of Microelectronics, China
Abstract :
A method was developed to estimate EEPROM device life based on the consistency for breakdown charge, QBD, for constant voltage time dependent dielectric breakdown (TDDB) and constant current TDDB stress tests. Although an EEPROM works with a constant voltage, QBD for the tunnel oxide can be extracted using a constant current TDDB. Once the charge through the tunnel oxide, ΔQFG, is measured, the lower limit of the EEPROM life can be related to QBD/ΔQFG. The method is reached by erase/write cycle tests on an EEPROM.
Keywords :
electrically erasable programmable read , only memory (EEPROM) , time dependent dielectric breakdown (TDDB) , breakdown charge
Journal title :
Tsinghua Science and Technology
Journal title :
Tsinghua Science and Technology
