Title of article :
Molecular Dynamics Simulation of Al Energetic Nano Cluster Impact (ECl) onto the Surface
Author/Authors :
Mirabbaszadehi, K. amirkabir university of technology - Nano Technology Center - Department of Physics, تهران, ايران , Nayebi, P. islamic azad university - Department of Physics, ايران , Saramad, S. , Zaminpayma, E. amirkabir university of technology - Nano Technology Center - Department of Physics, تهران, ايران
Abstract :
On the atomic scale, Molecular Dynamic (MD) Simulation of Nano Al cluster impact on Al (100) substrate surface has been carried out for energies of 1-20 eV/atom to understand quantitatively the interaction mechanisms between the cluster atoms and the substrate atoms. The many body Embedded Atom Method (EAM) was used in this simulation. We investigated the maximum substrate temperature Tmax and the time tmax within which this temperature is reached as a function of cluster sizes. The temperature is linearly proportional to both energy per atom and total cluster energy. For the constant energy per atom and the cluster size increase, the correlated collisions rapidly transferred energy to the substrate, and the time tniax approached a constant value. We investigated the temperature Tmax dependence on the total energy Er and the cluster size. We showed that the cluster implantation and sputtering atoms from the surface are affected by the cluster size and kinetic energy of the clusters. Finally, time dependence of the number Ndis of disordered atoms in the substrate was observed.
Keywords :
Molecular Dynamic Simulation , Embedded Atom Method potential , Nanocluster , Al , Thin Film , Disordered Atoms , Implantation Atoms , Sputtering Atoms
Journal title :
AUT Journal of Modeling and Simulation
Journal title :
AUT Journal of Modeling and Simulation