Title of article :
Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping
Author/Authors :
Fathipour, M. university of tehran - The Author is with the Department of ECE, تهران, ايران , Refan, M. H. shahid rajaee teacher training university - Department of Electrical Engineering, تهران, ايران , Ebrahimi, S. M. shahid rajaee teacher training university - Department of Electrical Engineering, تهران, ايران
Abstract :
Abstract High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gatein this structure has been designed to resonate at 38.4MHz. The MOSFET in this devicehas a retrograde channel to achieve high output current. For this purpose, abrupt retrogradechannel and Gaussian retrograde channels have been investigated.
Keywords :
Natural Frequencies , Pull , in Voltage , Retrograde Channel , ResonantSuspended Gate (RSG) MOSFET.
Journal title :
Iranian Journal of Electrical and Electronic Engineering(IJEEE)
Journal title :
Iranian Journal of Electrical and Electronic Engineering(IJEEE)
