Title of article :
Dependence of Band Structure and Carrier Concentration of Metallic (13,13) and Semiconducting (13,0) Single Wall Carbon Nanotube on Temperature
Author/Authors :
KARAMDEL, J. Islam Azad University-South Tehran Branch - Faculty of Engineering - Electrical Department, ايران , KARAMDEL, J. Universiti Kebangsaan Malaysia - Institute of Microengineering and Nanoelectronics (IMEN), Malaysia , DAMGHANIAN, M. Universiti Kebangsaan Malaysia - Institute of Microengineering and Nanoelectronics (IMEN), Malaysia , Razaghian, F. Islam Azad University-South Tehran Branch - Faculty of Engineering - Electrical Department, ايران , DEE, C.F. Universiti Kebangsaan Malaysia - Institute of Microengineering and Nanoelectronics (IMEN), Malaysia , YEOP MAJLIS, B. Universiti Kebangsaan Malaysia - Institute of Microengineering and Nanoelectronics (IMEN), Malaysia
Abstract :
The electronic band structure, density of states (DOS) and carrier concentration of a (13,13) metallic and a (13,0) semiconducting Single Wall Carbon Nanotube (SWCNT) have been estimated and simulated by using the Fermi-Dirac distribution function. The energy dispersion E(k) relation for metallic SWCNT near the minimum energy is linear and the Fermi level was independent of temperature (T). On the other hand for semiconducting SWCNT the E(k) relation is parabolic. The normalized Fermi-Energy (EF – EC) in the nondegenerate regime is a weak (logarithmic) function of carrier concentration and varies linearly with T. In the degenerate condition, the Fermi level was independent of T and was a strong function of carrier concentration
Keywords :
Band structure , carbon nano , tube , carrier statistic , Fermi Level
