Author/Authors :
WAHAB, YUSSOF Universiti Teknologi Malaysia - Ibnu Sina Institute for Fundamental Science Studies (IIS), Malaysia , WAHAB, YUSSOF Universiti Teknologi Malaysia(UTM), International Campus - Razak School of Engineering and Advanced Technology, Malaysia , HAMIDINEZHAD, HABIB Universiti Teknologi Malaysia - Ibnu Sina Institute for Fundamental Science Studies (IIS), Malaysia , HAMIDINEZHAD, HABIB university of mazandaran - Faculty of Basic Sciences - Department of Physics, بابلسر, ايران , OTHAMAN, ZULKAFLI Universiti Teknologi Malaysia - Ibnu Sina Institute for Fundamental Science Studies (IIS), Malaysia
Abstract :
Silicon nanowires (SiNWs) with diameter of about a few nanometers and length of 3 μm on silicon wafers were synthesized by very high frequency plasma enhanced chemical vapor deposition. Scanning electron microscopy (SEM) observations showed that the silicon nanowires were grown randomly and energy-dispersive X-ray spectroscopy analysis indicates that the nanowires have the composition of Si, Au and O elements. The SiNWs were characterized by high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. SEM micrographs displayed SiNWs that are needle-like with a diameter ranged from 30 nm at the top to 100 nm at the bottom of the wire and have length a few of micrometers. In addition, HRTEM showed that SiNWs consist of crystalline silicon core and amorphous silica layer.
