Kajian Mengenai Kebersandaran Pembentukan Keadaan Potong Bawah Penjuru Terhadap Jenis Larutan Pemunar dalam Penghasilan Diafrarn Beralun Silikon

This paper describes the simulation study of the effect of the etchant type on the convex corner phenomenon of the silicon (100) corrugated diaphragm during the anisotropic etching process. Potassium hydroxide (KOB) and tetramethyl ammonium hydroxide (TMAH) were used as an etchant in order to produce the diaphragm respectively. The Intellisuite process simulation software has been used in this simulation. Based on the geometrical etched structure of the convex corners and the emergent of the new silicon planes, the convex corner-undercutting phenomenon was found to be much more pronounced when TMAI-I is used as the etchant.