Author/Authors :
Shahar, Mohd Lutfi Ahmad University Malaysia Perlis (UniMAP) - School of Microelectronic Engineering (SoME), Malaysia , Abdul Rais, Shamsul Amir University Malaysia Perlis (UniMAP) - School of Microelectronic Engineering (SoME), Malaysia , Abd.Wahid, Mohamad Halim University Malaysia Perlis (UniMAP) - School of Microelectronic Engineering (SoME), Malaysia , Idris, Izzul Hasif Che University Malaysia Perlis (UniMAP) - School of Microelectronic Engineering (SoME), Malaysia , Mazalan, Mazlee University Malaysia Perlis (UniMAP) - School of Microelectronic Engineering (SoME), Malaysia , Ahmad, Mohd Fairus University Malaysia Perlis (UniMAP) - School of Microelectronic Engineering (SoME), Malaysia , Norizan, Mohd Natashah University Malaysia Perlis (UniMAP) - School of Microelectronic Engineering (SoME), Malaysia
Abstract :
Bulk nanoporous metal has become a reliable source to replace liquid as source to generate EUV lithography which have debris problem to tackle. A solid yet low density porous material promised a low melting point and low plasma density. The plasma density of bulk nanoporous Sn and SnO2 profile plays a key role in the generation of 13.5 nm light for an extreme ultraviolet lithography (EUVL) source from laser produced plasma (LPP). The success of this preparation method might solve problems related to EUV lithography, or even soft Xray (XUV) lithography. In this paper, we present the preliminary result of preparing such ideal low density target in form of bulk metal porous.
