Title of article :
Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices
Author/Authors :
AIwan, AIwan M. University of Technology - School of Applied sciences, Iraq , Abdulzahra, Narges Z. University of Technology - School of Applied sciences, Iraq , Ahmed, N. M. University Malaysia Perlis - School of Microelectronic Engineering, Malaysia , Halim, N. H. A. University Malaysia Perlis - School of Microelectronic Engineering, Malaysia
Abstract :
The morphological properties of the freshly and oxidized porous silicon at oxidation time (60, 90) sec were studied. Eyes, can see a blue emission from PSi after thermal oxidation, we can obvious increasing energy gab, that due to decrease silicon column (nano particles).Pore size and shape of n-type wafers are estimate and correlated with optical properties before and after rapid thermal oxidation (RTO).
Keywords :
Porous silicon , Oxidation , Optical properties.
Journal title :
International Journal of Nanoelectronics and Materials
Journal title :
International Journal of Nanoelectronics and Materials
