Title of article :
Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method
Author/Authors :
Ahmed, Naser M. Universiti Malaysia Perlis - School of Microelectronic Engineering, Malaysia , Sauli, Zaliman Universiti Malaysia Perlis - School of Microelectronic Engineering, Malaysia , Hashim, Uda Universiti Malaysia Perlis - School of Microelectronic Engineering, Malaysia , Al-Douri, Yarub Universiti Malaysia Perlis - School of Microelectronic Engineering, Malaysia
Abstract :
The design of optoelectronic devices fabricated from III-Nitride materials is aided by knowledge of refractive index and absorption coefficient of these materials .The optical properties of Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN grown by MOVPE on sapphire were investigated by means of transmittance measurements .The optical transmission method is successfully used to determine the refractive index (n), absorption coefficient (α), film thickness and energy gap of three samples of film over the spectral range of (1-5 eV) .
Keywords :
Absorption coefficient , Refractive index , Optical properties , III , Nitride energy band gap
Journal title :
International Journal of Nanoelectronics and Materials
Journal title :
International Journal of Nanoelectronics and Materials
