Title of article :
Quantization of electromagnetic fields in the presence of a spherical semiconductor quantum dot and spontaneous decay of an excited atom doped in this nanostructure
Author/Authors :
Roknizadeh, Rasoul university of isfahan - University of Isfahan, اصفهان, ايران , Karimzadeh Esfahani, E, E university of isfahan - اطلاعاتي از وابستگي سازماني در دست نمي باشد, اصفهان, ايران , Bagheri Harouni, M, M university of isfahan - اطلاعاتي از وابستگي سازماني در دست نمي باشد, اصفهان, ايران
Abstract :
In this paper we consider electromagnetic field quantization in the presence of a dispersive and absorbing semiconductor quantum dot. By using macroscopic approach and Green s function method, quantization of electromagnetic field is investigated. Interaction of a two-level atom , which is doped in a semiconductor quantum dot, with the quantized field is considered and its spontaneous emission rate is calculated. Comparing with the same condition for an excited atom inside the bulk, it is shown that the spontaneous emission rate of an atom will decrease.
Keywords :
Semiconductor Quantum Dot , Quantization , Spontaneous Emission ,
Journal title :
International Journal of Optics and Photonics (IJOP)
Journal title :
International Journal of Optics and Photonics (IJOP)