Title of article :
Wideband 5.8 GHz Radio Frequency Amplifier with 3 dB Π- Network Att enuator Isolation
Author/Authors :
Othman, A. R Universiti Teknikal Malaysia Melaka (UTeM) - Faculty of Electronic Computer Engineering, Malaysia , Hamidon, A. H Universiti Teknikal Malaysia Melaka (UTeM) - Faculty of Electronic Computer Engineering, Malaysia , Husain, M.N Universiti Teknikal Malaysia Melaka - Faculty of Electronic and Computer Engineering, Malaysia , Johal, M.S Universiti Teknikal Malaysia Melaka - Faculty of Electronic and Computer Engineering, Malaysia , Ibrahim, A.B Universiti Teknikal Malaysia Melaka (UTeM) - Faculty of Electronic Computer Engineering, Malaysia
Abstract :
This paper presents a design of radio frequency amplifier (RFA), which operates at 5.8 GHz frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contribute a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth measures is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc.
Keywords :
Amplifier , Radio Frequency Amplifier , Microstrip.
Journal title :
Journal of Telecommunication Electronic and Computer Engineering
Journal title :
Journal of Telecommunication Electronic and Computer Engineering
