Comparison of electrical characteristics between Bulk MOSFET and Silicon-on-insulator (SOI) MOSFET

Conventional MOSFET has already passed lower than 45nm transistor fabrication. As silicon is now hitting the atomic resolution and reaching its physical and electrical limitation, producing a proper working transistor tends to be more difficult and complicated. The major challenge is to fabricate a transistor with a nominal threshold voltage (VTH), lower gate leakage current (IOFF) and lower drain induced barrier lowering (DIBL). To overcome these problems, Siliconon- insulator (SOI) MOSFET has been proposed, and it is believed to be capable of suppressing short channel effects (SCEs) by burying oxide layer in the silicon substrate. ATHENA and ATLAS module of SILVACO software were used in simulating the virtual fabrication and electrical performance of the transistors. An investigation on the characteristics and performance of the devices has been conducted in order to compare their electrical characteristics. The MOSFET structure was constructed by utilizing SILVACO Athena module, and the electrical characteristics were simulated using SILVACO Atlas module. The results of both the conventional bulk MOSFET and the SOI MOSFET were analyzed. It was observed that SOI MOSFET was superior compared to the conventional MOSFET in terms of their overall electrical characteristics.