Implementation of Taguchi Modeling for Higher Drive Current (ION) in Vertical DG-MOSFET Device

Vertical Double-Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is capable to minimize various short channel effect (SCEs) problems. Vertical DG-MOSFET is constructed by having two gates that are able to control the channel from both sides and has better electrostatic control over the channel. Meanwhile, the drive current (ION) should be maintained above 0.2mA in order to decide the driving capability of the device. The drive current (ION) must be set at high value so that the transistor acquires superb driving characteristics that are capable to switch the device into on-state condition. This paper describes the design of a vertical DGMOSFET, while keeping the drive current (ION) as maximum as possible, by utilizing both SILVACO TCAD software and statistical methods. Based on the ANOVA method, factor E (Halo Implant Energy – 45%), factor F (Halo Implant Tilt – 22%) and factor L (Compensation Implant Energy – 15.78%) were recognized as the most significant factors. The maximum value of drive current (ION) was observed to be at 0.3291 mA/μm with signal-to-noise ratio of -10.00dB.