Influence of thickness and temperature on the properties of Cu2S thin films

Copper Sulphide (Cu2S) thin films at different thicknesses and annealing temperatures were deposited onto glass substrate by vacuum evaporation method. XRD study reveals the phase transformation of Cu2S film at higher thickness. Optical and resistivity study show the phase transformation of the film from Cu2S to CuS when they are annealed at higher temperature. SEM study exhibits the disappearance of large size particles of annealed film. Stability of the film is controlled when the films are prepared at higher thickness. Optical band gap and activation energy for different thickness and various annealing temperatures of Cu2S thin film were calculated and the values are reported. Photocurrent enhances with film thickness and heat treatment.