KAJIAN MENGENAI KESAN SUHU, KEPEKATAN LARUTAN KOH DAN TEMPOH PUNARAN TERHADAP PEMBENTUKAN KEADAAN POTONG BAWAH PENJURU DIAFRAM BERALUN SILIKON

This paper presents the results of simulation study on the effect of the temperature and concentration of the kalium hydroxide (KOH) etchants on the corner-undercutting phenomenon with respect to the formation of the silicon (100) corrugated diaphragm using KOH anisotropic etching. The Intellisuite process simulation software has been used in this study. Based on the geometrical etched structure of the convex corners and the emergent of the new silicon planes, the convex corner-undercutting phenomenon is found to be much more pronounced with increasing temperature and decreasing concentration of the KOH etchants