Title of article :
Multilayer antireflection coatings model for red emission of silicon for optoelectronic applications
Author/Authors :
Salih, Kifah Q. University Malaysia Perlis - School of Microelectronic Engineering, Malaysia , Ahmed, N. M. University Malaysia Perlis - School of Microelectronic Engineering, Malaysia
Abstract :
A model, based on the Transfer Matrix Method (TMM) of multilayer is used to evaluate the transmittance at the central wavelength 720 nm of Si when using Ge, SiO2 and Si as multilayer thin film coatings.In this study, the results indicate that the transmissivity of ~ (720-750) nm emission of Silicon as emitter is affected significantly by multilayer thin film coatings of Ge, SiO2 and Si. Si /SiO2/Air and Si /Ge/Si/SiO2/Air show high transmissivity 92% and ~100% at central wavelength design (720nm) respectively. Uncoated Si surface shows low transmissivity -66%.The width of the high-transmittance region of Si/Ge/Si/SiO2/Air is less than Si/SiO2/Air .The origin of the red emission of Si has been investigated
Keywords :
Antireflection coatings , Silicon active medium , transmissivity
Journal title :
International Journal of Nanoelectronics and Materials
Journal title :
International Journal of Nanoelectronics and Materials