Author/Authors :
madugu, m.l. sheffield hallam university - materials and engineering research institute - electronic materials and sensors group, Sheffield, UK , madugu, m.l. gombe state university - faculty of science - department of physics, Gombe, Nigeria , olusola, o.i. the federal university of technology - school of science - department of physics, Akure, Nigeria , olusola, o.i. sheffield hallam university - materials and engineering research institute - electronic materials and sensors group, Sheffield, UK , ojo, a.a. sheffield hallam university - materials and engineering research institute - electronic materials and sensors group, Sheffield, UK , pindiga, n.y. gombe state university - faculty of science - department of chemistry, Gombe, Nigeria
Abstract :
Indium selenide (In_xSe_y) layers were grown on glass/FTO substrates using electrodeposition technique in a potentiostatic mode. After growth, the materials were characterised for their structural, optical and electrical properties. Structural studies show that the material is amorphous with no InxSey peak as revealed by the X-ray diffraction (XRD) spectra. Optical studies using ultraviolet visible (UV-Vis) spectrophotometer show that the material bandgap increased from 2.45 eV in the asdeposited and increased to 2.90 eV after annealing. Electrical studies on the conductivity type of the In_xSe_y thin films show that, both n-type and p-type InxSey layers were grown by simply varying the growth potential. Materials deposited at low growth voltages are p-type in electrical conduction while those grown at higher potentials show n-type electrical conduction.
Keywords :
InxSey , Electrodeposition , n , type and p , type , Amorphous
