Characterization and Transport Properties of Indium Sesquitelluride Monocrystals

In the present study, single crystals of defect semiconductor In2Te3 were grown by the Bridgman technique. An investigation was made on the Hall effect, electrical conductivity and thermoelectric power of In2Te3 monocrystal in wide temperature range. The investigated samples were p-type conducting. The Hall coefficient yields a room-temperature carrier concentration of 7.8 x10^9cm^-3. The band gap was found to be Δ Eg = 0.99 eV. Hence a combination of the electrical conductivity and Hall effect measurements enable us to study the influence of temperature on the Hall mobility and to discuss the scattering mechanism of the charge carriers. Also the present investigation involves thermo -electric power measurements of In2Te3 single crystals, These measurements enable us to determine many physical parameters such as carriers mobilities, effective masses of free charge carriers, diffusion coefficients, diffusion length, as well as relaxation time. Also the figure of merit was determined.