Dielectric Permittivity, AC Conductivity and Electric Modulus Properties of Metal/Ferroelectric/Semiconductor (MFS) Structures

Metal-ferroelectric-semiconductor (MFS) structures were established on n-Si by using Bi4Ti3O12, a ferroelectric material. Dielectric permittivity, conductivity and modulus properties of MFS structure were characterized through capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements. Frequency and temperature dependence of these properties were studied in the ranges of 1 kHz-1 MHz and 100-400 K, respectively. It is observed that the C and G/ω values decrease with the increasing frequency, while they increase with the increasing temperature. The values of the ε and ε are found to decrease with the increasing frequency and increase with the increasing temperature. The σac is found to increase with the increasing frequency and temperature. In addition, the real (M ) and imaginary (M ) components of the electrical modulus were calculated from the values of ε and ε . Activation energy (Ea), from the Arrhenius plot, is also studied to discuss the conduction mechanism in MFS structure.