Analysis of barrier height and carrier concentration of MOS capacitor using C-f and G/ω-f measurements

Capacitance (C) and conductance (G/ω) measurements of MOS capacitor with Si3N4 dielectric deposited on Si have been investigated in the frequency range of 1 kHz to 1 MHz at room temperature. The experimental results indicate that the values of the measured C and G/ω decrease with the increasing frequency. The 1/C²-V curves are linear in the wide voltage region for each frequency. This linearity of the curves is attributed to the uniformity of the donor concentration in the depletion region. Also,the barrier height (ΦB) and carrier (donor) concentration (ND) were obtained from C^-2V characteristics. The values of the ΦB and ND decrease with the increasing frequency.