The Effect of Growth Conditions on The Optical and Structural Properties of InGaN/GaN MQW LED Structures Grown by MOCVD

Five period InGaN/GaN MQW LED wafers were grown by low pressure MOCVD on an AlN buffer layer,which was deposited on a c-plane (0001)-faced sapphire substrate. The effect of growth conditions,such as the well growth time,growth temperatures,and indium flow rate on the properties of MQW structures were investigated by using high resolution X-ray diffraction and room temperature photoluminescence. By increasing growth temperature,the emission wavelengths showed a blue-shift while it red-shifted via an increase in the indium flow rate. The emission wavelength can be tuned by way of changing the well growth time of the samples.