Author/Authors :
Jassim, K. A. University of Baghdad - College of Education Ibn-Al-Haithem - Department of Physics, Iraq
Abstract :
In the present study, we have reported investigations on the effect of simultaneous substitution of Tl at the Hg site in the oxygen deficient HgOδ layer of Hg1-xTlxBa2Ca2Cu3O8+ δ cuprate sup erconductor. Bulk polycrystalline samples were prepared by the two-step solid state reaction process. It was observed that the grown Hg1-xTlxBa2Ca2Cu3O8+ δ corresp onds to the 1223 phase. Electrical resistivity, using four probe technique, is used to find the transition temperature Tc. The highest Tc(0ffset) were 108, 102,113, 118, 125 and 121K for Hg1- xTlxBa2Ca2Cu3O8+ δ with x = 0.0, 0.05, 0.10, 0.15, 0.20 and 0.25 respectively. The optimum Tc (off) of ~ 125 K and Tc(onset) ~ 136K was found for the composition Hg0.80Tl0.20Ba2Ca2Cu3O8.293. All the samples preparation with O2 flow, we found that the O2 flow in our samples p roduce high- Phase sup erconductors. X-ray diffraction(XRD) analysis showed a pseudotetragonal structure with an increase of the c-axis lattice constant for the samples doped with Tl as compared with these have no Tl content. It was found that the change of the Tl concentrations of all our samples p roduces a change in the M ass density ρm, c/a and volume fraction VPh(1223).
