Title of article :
Electron Transfer At Semiconductor / Liquid Interfaces
Author/Authors :
Al-Agealy, H.J.M. University of Baghdad - College of Education Ibn-Al-Haitham - Department of Physics, Iraq , AL-Obaidi, R.I.N. Universityof Baghdad - College of Education Ibn- Al- Haitham - Department of physics, Iraq
Abstract :
Electron Transfer reaction rate constants at Semiconductor / Liquid interfaces are calculated dy using the Fermi Golden Rule for Semiconductor. The reorganization energy λ(eV) is computed for Semiconductor / Liquid Interfaces system in two solvents and compared with experimental value. The driving force (free energy) ΔGo(eV) is calculated depending on spectrum Ru(H2L`)2 (NCS)2 . The transfer is treated according with weak coupling (nonadiabatic) for two – state level between the Semiconductor and acceptor molecule state.
Journal title :
Ibn Alhaitham Journal For Pure and Applied Science
Journal title :
Ibn Alhaitham Journal For Pure and Applied Science
