Title of article :
Comparison I-V Characteristics of Sb/c-Si and Al/c-Si Junction
Author/Authors :
Hachim, Fatin G. University of Thi -Qar - College of Science - Department of Physics, Iraq , Al-Ansari, Ramiz A. University of Baghdad - College of Science for Women - Department of Physics, Iraq , AL-Lamy, Hussein Kh. University of Baghdad - College of Science - Department of Physics, Iraq
Abstract :
Hetero junctions are fabricated by depositing antimony (Sb) and Al films on n-type single crystal(c-Si) wafers by the method of vacuum evaporation with thickness (0.25μm), with rate of deposition equals to 2.77 Å/sec, all samples are annealed in a vacuum for one hour at 473K. The tests have shown that all the films have polycrystalline structure for all Sb films. The barrier heights in (Sb/c-Si) junction was found to be equal 0.825eV, but(Al/c-Si) junction ohmic contact. Current-voltage measurements confirm this behaviour.
Keywords :
Sb , Si heterojunctions , I , V characteristics of Sb , Si , structure properties of Sb.
Journal title :
Ibn Alhaitham Journal For Pure and Applied Science
Journal title :
Ibn Alhaitham Journal For Pure and Applied Science
