Author/Authors :
al-agealy, hadi j. m. university of baghdad - college of education seience pure ( ibn-al haitham) - department of physics, Iraq , hassoni, mohsin a.h. university of baghdad - college of education seience pure ( ibn-al haitham) - department of physics, Iraq , ahmad, mudhar sh. university of baghdad - college of education seience pure ( ibn-al haitham) - department of physics, Iraq , noori, rafah i. university of baghdad - college of education seience pure ( ibn-al haitham) - department of physics, Iraq , jheil, sarab s. university of baghdad - college of education seience pure ( ibn-al haitham) - department of physics, Iraq
Abstract :
A quantum mechanical description of the dynamics of non-adiabatic electron transfer in
metal/semiconductor interfaces can be achieved using simplified models of the system. For
this system we can suppose two localized quantum states donor state |D› and acceptor state
|A› respectively. Expression of rate constant of electron transfer for metal/semiconductor
system derived upon quantum mechanical model and perturbation theory for transition
between |𝐷〉 and |𝐴〉 state when the coupling matrix element coefficient is smaller than
0.025eV. The rate of electron transfer for Au/ ZnSe and Au/ZnS interface systems is
evaluated with orientation free energy using a Matlap program. The results of the electron
transfer rate constant are calculated for our modeas well as with experimental results .
