Title of article :
Effect of Thickness on the Electrical Conductivity and Hall Effect Measurements of (CIGS) Films
Author/Authors :
al-maiyaly, bushra k.h. university of baghdad - college of education for pure science (ibn al-haitham) - department of physics, Iraq , khudayer, iman.h. university of baghdad - college of education for pure science (ibn al-haitham) - department of physics, Iraq , abd alrazak, ali h. university of baghdad - college of education for pure science (ibn al-haitham) - department of physics, Iraq
Abstract :
The influence of different thickness (500, 1000, 1500, and 2000) nm on the electrical
conductivity and Hall effect measurements have been investigated on the films of copper
indium gallium selenide CuIn1-xGaxSe2 (CIGS) for x= 0.6.The films were produced using
thermal evaporation technique on glass substrates at R.T from (CIGS) alloy.
The electrical conductivity (σ), the activation energies (Ea1, Ea2), Hall mobility and the
carrier concentration are investigated and calculated as function of thickness. All films
contain two types of transport mechanisms of free carriers, and increase films thickness was
fond to increase the electrical conductivity whereas the activation energy (Ea) would vary
with films thickness.
Hall Effect analysis results of CIGS films show all films were (p-type) and both Hall
mobility and the carrier concentration increase with the increase of films thickness.
Keywords :
Thermal Evaporation , Hall Effect , Electrical conductivity , Films , CIGS
Journal title :
Ibn Alhaitham Journal For Pure and Applied Science
Journal title :
Ibn Alhaitham Journal For Pure and Applied Science
