Title of article :
Fabrication and Characterization CdO:In/Si Photovoltaic Solar Cell Prepard By Thermal Evaporation
Author/Authors :
mustafa, mohammed h. university of baghdad - college of education for pure scince(ibn al-haitham) - department of physics, Iraq
Pages :
6
From page :
273
To page :
278
Abstract :
In this work, CdO:In/Si heterojunction solar cell has been made by vacuum evaporation of cadmium oxide doped with 1% of indium thin film onto glass and silicon substrates with rate deposition (3.9A/sec) and thickness(≈250nm). XRD was investigated, the transmission was determined in range (300-1100)nm and the direct band gap energy is 2.43 eV, I-V characterization of the cell under illumination was investigated , the cell shows an open circuit voltage (Voc) of 0.6 Volt, a short circuit current density (Jsc) of 12.8 mA/cm2, a fill factor (F.F) of 0.66, and a conversion efficiency (η) of 5.2%
Keywords :
Cell , Solar , Photovoltaic , Characterization , Fabrication
Journal title :
Ibn Alhaitham Journal For Pure and Applied Science
Serial Year :
2014
Journal title :
Ibn Alhaitham Journal For Pure and Applied Science
Record number :
2602465
Link To Document :
بازگشت