Author/Authors :
abd aziz, tengku norazman tengku universiti teknologi mara - faculty of electrical engineering, Shah Alam, Malaysia , rosli, aimi bazilah universiti teknologi mara - faculty of electrical engineering, Shah Alam, Malaysia , mohd yusoff, marmeezee universiti teknologi mara - faculty of electrical engineering, Shah Alam, Malaysia , herman, sukreen hana universiti teknologi mara - faculty of electrical engineering, Shah Alam, Malaysia , zulkifli, zurita universiti teknologi mara - faculty of electrical engineering, Shah Alam, Malaysia
Abstract :
Hybrid ZnO-Graphene devices have revealed a stable switching cycle compared to ZnO devices. They have better memristive performance and are suitable in non-volatile memory applications. Here, we report the effect of ZnO growth temperature on the memristive effect of ZnO and hybrid ZnO-Graphene thin films. We show the electrical, optical and morphological properties of the devices using Thermal Chemical Vapour Deposition (TCVD) and Water Bath methods. The relationship between ZnO morphological structure and carrier mobility is discussed. Additionally, the effect of Graphene insertion is shown in the number of switching cycles. It was found that the ZnO thin film deposited at 350˚C showed high resistance ratio of about 3.17 due to the defects present in the crystal structure. On the other hand, nanoparticles in 450˚C and 550˚C samples resulted in thicker films that reduced the memristive window to 1.9 and 2.6 respectively. Hybrid devices exhibited increased stability at switching cycle 4 compared to ZnO devices.
Keywords :
Graphene , TCVD , Water Bath , ZnO
