Author/Authors :
ismail, a.s. universiti teknologi mara - faculty of electrical engineering, Shah Alam, Malaysia , mamat, m.h. universiti teknologi mara - faculty of electrical engineering, Shah Alam, Malaysia , banu, i.b. shameem b.s. abdur rahman university - department of physics, Vandalur, India , ahmad, w.r.w. universiti teknologi mara - faculty of electrical engineering, Shah Alam, Malaysia , md. sin, n.d. universiti teknologi mara - faculty of electrical engineering, Shah Alam, Malaysia , suriani, a.b. universiti pendidikan sultan idris (upsi) - nanotechnology research centre, faculty of science and mathematics, Perak, Malaysia , ahmad, m.k. universiti tunhussein onn malaysia(uthm) - shamsuddin research centre(mintsrc),faculty of electricaland electronic engineering, Johor, Malaysia , zoolfakar, a.s. universiti teknologi mara - faculty of electrical engineering, Shah Alam, Malaysia , rusop, m. universiti teknologi mara - faculty of electrical engineering, Shah Alam, Malaysia
Abstract :
Tin (Sn)-doped zinc oxide (ZnO) films were synthesized using sol-gel immersion method where different concentration of sodium hydroxide (NaOH) were used during the synthesis process. The structural, optical, and current-voltage (I-V) characteristics of the films were investigated. From the FESEM images, it is observed that the density of the nanorods improved with the increment of NaOH concentrations. The average diameters of the nanorods reduced from 80 nm to 67 nm after the concentrations of NaOH were increased from 0 to 0.01 M. The optical measurement indicates that the synthesized films possessed good transmittance properties. 0.01 M of NaOH produced the highest bandgap energy of 3.26 eV compared to other films. In case of electrical properties measurement, 0.01 M NaOH produced the lowest resistance film. These results indicate that the addition of NaOH into acidic-based solution is crucial to control the growth of nanostructures.
Keywords :
Terms—Nanorod , NaOH , Sn , doped ZnO
