Analysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar Transistor Laser

In this paper, we present an analytical model to analysis the kirk effect on static and dynamic responses of quantum well heterojunction bipolar transistor lasers (HBTLs). Our analysis is based on solving the kirk current equation, continuity equation and rate equations of HBTL. We compare the performance (current gain, output photon number and small signal modulation bandwidth) of the transistor laser with different levels of the kirk current. We show that, at high collector currents, the static and small signal behavior of HBTL depend on kirk current level. The results indicate that, the level of kirk current affect current gain, output photon number and modulation bandwidth From simulation results, it can befound that, kirk effect has destructive influence on HBTL performance. It was found that lower modulation bandwidth and lower current gain occurs at lower kirk current level. For increasing kirk current, the high collector-base voltage and high collector length was proposed.