Author/Authors :
Gorshkov, Oleg Research and Educational Center for Physics of Solid State Nanostructures - Lobachevsky State University of Nizhny Novgorod - Nizhny Novgorod , Russia , Filatov, Dmitry Research and Educational Center for Physics of Solid State Nanostructures - Lobachevsky State University of Nizhny Novgorod - Nizhny Novgorod , Russia , Antonov, Dmitry Research and Educational Center for Physics of Solid State Nanostructures - Lobachevsky State University of Nizhny Novgorod - Nizhny Novgorod , Russia , Shenina, Maria Research and Educational Center for Physics of Solid State Nanostructures - Lobachevsky State University of Nizhny Novgorod - Nizhny Novgorod , Russia , Kazantseva, Inga Department of Physics - Lobachevsky State University of Nizhny Novgorod - Nizhny Novgorod , Russia , Pavlov, Dmitry Department of Physics - Lobachevsky State University of Nizhny Novgorod - Nizhny Novgorod , Russia , Antonov, Ivan Research Institute for Physics and Technology - Lobachevsky State University of Nizhny Novgorod - Nizhny Novgorod , Russia
Abstract :
Wereportontheinvestigationoftheresistiveswitching(RS)intheultrathin(≈5nminthickness)yttria-stabilizedzirconia(YSZ)filmswithsinglelayersofAunanoparticles(NPs)byconductiveatomicforcemicroscopy(CAFM).Besidesthebutterfly-typehysteresisloopsinthecurrent-voltage(I-V)curvesofthecontactoftheCAFMprobetotheinvestigatedfilmsurfacecorrespondingtothebipolarRS,thenegativedifferentialresistance(NDR)hasbeenobservedintheI-VcurvesoftheAFMprobecontacttotheYSZfilmswithAuNPsintheconductive(“ON”)state.TheNDRhasbeenrelatedtotheresonanttunnelingofelectronsthroughthesize-quantizedenergystatesintheultrafine(1to2nmindiameter)AuNPsbuiltintheconductivefilamentsintheYSZfilms.
Keywords :
Conductive Atomic Force Microscopy , Resistive Switching , Yttria-Stabilized Zirconia Films , Au Nanoparticles , yttria-stabilizedzirconia(YSZ) , Resistiveswitching(RS)
