Title of article
Une surstructure de α-Ge, type diamant, induite par un dopage d'antimoine
Author/Authors
Gómez Herrero, Adrian Centro de Microscopia Electrónica - Universidad Complutense, Spain , Hammoudi, Lamia Université Houari-Boumedienne - Faculté de Chimie - Laboratoire Sciences des Matériaux, Algeria , Kars, Mohammed Université Houari-Boumedienne - Faculté de Chimie - Laboratoire Sciences des Matériaux, Algeria , Roisnel, Thierry Centre de Diffractométrie X - Sciences Chimiques de Rennes - UMR 6226 CNRS Université de Rennes 1, France , Otero-Diáz, L. Carlos Departomento Inorgánica - Facultad C.C. Químicas - Universidad Complutense, Spain
Pages
8
From page
1
To page
8
Abstract
Single crystals of antimony-doped germanium, Ge1–xSbx+0.01 (x ≃ 0.0625), were grown by chemical transport reaction. The alloy crystallizes as a superstructure of diamond-type α-Ge. All atoms in the asymmetric unit lie on special positions and are characterized by strong covalent bonds. The antimony atoms substitute for one germanium atom at full occupancy at Wyckoff position 4a (site symmetry -43m), and are also at an adjacent tetrahedral interstitial site with partially occupation (16%) at position 4c (or 4d) (site symmetry -43m). The structural model does not show close Sb⋯Sb contacts, and suggests that the interstitial antimony atoms move between the two adjacent tetrahedral sites.
Keywords
crystal structure , antimony , doped germanium , superstructure
Journal title
Acta Crystallographica Section E: Crystallographic Communications
Serial Year
2017
Record number
2621735
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