Title of article :
Une surstructure de α-Ge, type diamant, induite par un dopage d'anti­moine
Author/Authors :
Gómez Herrero, Adrian Centro de Microscopia Electrónica - Universidad Complutense, Spain , Hammoudi, Lamia Université Houari-Boumedienne - Faculté de Chimie - Laboratoire Sciences des Matériaux, Algeria , Kars, Mohammed Université Houari-Boumedienne - Faculté de Chimie - Laboratoire Sciences des Matériaux, Algeria , Roisnel, Thierry Centre de Diffractométrie X - Sciences Chimiques de Rennes - UMR 6226 CNRS Université de Rennes 1, France , Otero-Diáz, L. Carlos Departomento Inorgánica - Facultad C.C. Químicas - Universidad Complutense, Spain
Pages :
8
From page :
1
To page :
8
Abstract :
Single crystals of anti­mony-doped germanium, Ge1–xSbx+0.01 (x ≃ 0.0625), were grown by chemical transport reaction. The alloy crystallizes as a superstructure of diamond-type α-Ge. All atoms in the asymmetric unit lie on special positions and are characterized by strong covalent bonds. The anti­mony atoms substitute for one germanium atom at full occupancy at Wyckoff position 4a (site symmetry -43m), and are also at an adjacent tetra­hedral inter­stitial site with partially occupation (16%) at position 4c (or 4d) (site symmetry -43m). The structural model does not show close Sb⋯Sb contacts, and suggests that the inter­stitial anti­mony atoms move between the two adjacent tetra­hedral sites.
Keywords :
crystal structure , anti­mony , doped germanium , superstructure
Journal title :
Acta Crystallographica Section E: Crystallographic Communications
Serial Year :
2017
Full Text URL :
Record number :
2621735
Link To Document :
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