The Effect of Nd:YAG, Semiconductor, He-Ne laser and Beta, Gamma irradiation on Leishmania tropica Promastigotes

This work evaluated the effect of Nd:YAG, Semiconductor, He-Ne laser and Beta, Gamma irradiation on Leishmania tropica promastigotes in vitro. The experiment included a control and tetraplicate of L. tropica promastigotes exposed to Nd:YAG laser in 500 pulse between each pulse 6 sec, in wavelength 1060 A°; the effect of Semiconductor laser in (5, 10, 20, 30) minute , with wavelength 532 nm; also use He-Ne laser in (5, 10, 20, 30 ) minute, with wavelength 6328 Ao; and effect of Beta and Gamma irradiation by Cs isotopes , in two doses (1.105607x10 Gy, for 2hr, and in dose 1.650992x10 Gy for 3hr), cesium isotopes that give two type of decay Gamma and Beta Rays. The effect of Nd:YAG, Semiconductor, He-Ne laser and Beta, Gamma irradiation on the viability of L. tropica promastigote was determined using the colorimetric MTT assay, the number of viable cells of L. tropica was fewer than control (without exposure to laser and irradiation ). Nd:YAG laser, Semiconductor laser, He-Ne laser and Beta , Gamma irradiation was efficient in killing tropica promastigotes in vitro, and the remain of L. tropica after exposure to laser and irradiation was devoid flagellum and may affect the capability of infection.